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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. january 2014 docid023669 rev 3 1/15 15 STL30P3LLH6 p-channel 30 v, 0.024 typ., 9 a stripfet? vi deepgate? power mosfet in a powerflat? 5x6 package datasheet ? preliminary data figure 1. internal schematic diagram features ? r ds(on) * q g industry benchmark ? extremely low on-resistance r ds(on) ? high avalanche ruggedness ? low gate drive power losses applications ? switching applications description this device is a p-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. note: for the p-channel power mosfets the actual polarity of the voltages and the current must be reversed. $0y ' * 6 1 2 3 4 powerflat? 5x6 order code v ds r ds(on) max i d p tot STL30P3LLH6 30 v 0.03 9 a 4.8 w table 1. device summary order code marking package packaging STL30P3LLH6 30p3l powerflat tm 5x6 tape and reel www.st.com
contents STL30P3LLH6 2/15 docid023669 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
docid023669 rev 3 3/15 STL30P3LLH6 electrical ratings 1 electrical ratings note: for the p-channel power mosfets the actual polarity of the voltages and the current must be reversed. table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 30 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according to r thj-c drain current (continuous) at t c = 25 c 30 a i d (1) drain current (continuous) at t c = 100 c 18.75 a i d (2) 2. this value is rated according to r thj-pcb drain current (continuous) at t pcb = 25 c 9 a i d (2) drain current (continuous) at t pcb = 100 c 6.4 a i dm (2)(3) 3. pulse width is limited by safe operating area drain current (pulsed) 36 a p tot (1) total dissipation at t c = 25 c 75 w p tot (2) total dissipation at t pcb = 25 c 4.8 w derating factor (2) 0.03 w/c t stg storage temperature - 55 to 175 c t j max. operating junction temperature 175 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 2.00 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, steady state thermal resistance junction-pcb, single operation 31.3 c/w
electrical characteristics STL30P3LLH6 4/15 docid023669 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) note: for the p-channel power mosfets the actual polarity of the voltages and the current must be reversed. table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 250 a30 v i dss zero gate voltage drain current v gs = 0, v ds = 30 v 1 a v gs = 0, v ds = 30 v, t c =125 c 10 a i gss gate-body leakage current v ds = 0, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a1 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 4.5 a 0.024 0.03 v gs = 4.5 v, i d = 4.5 a 0.032 0.040 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 1450 - pf c oss output capacitance - 178 -pf c rss reverse transfer capacitance - 120 -pf q g total gate charge v dd = 24 v, i d = 9 a, v gs = 4.5 v -12-nc q gs gate-source charge - 4.4 - nc q gd gate-drain charge - 5 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 24 v, i d = 4.5 a, r g = 4.7 , v gs = 10 v -15-ns t r rise time - 15 - ns t d(off) turn-off delay time - 24 - ns t f fall time - 21 - ns
docid023669 rev 3 5/15 STL30P3LLH6 electrical characteristics note: for the p-channel power mosfets the actual polarity of the voltages and the current must be reversed. table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 9 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 36 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 4.5 a, v gs = 0 - 1.1 v t rr reverse recovery time i sd = 4.5 a, di/dt = 100 a/ s v dd = 16 v, t j =150 c -15 ns q rr reverse recovery charge - 6.5 nc i rrm reverse recovery current - 0.9 a
electrical characteristics STL30P3LLH6 6/15 docid023669 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10ms 1s 100ms 0.01 tj=175c tc=25c single pulse am17940v1 single pulse =0.5 0.05 0.02 0.01 0.1 0.2 k 10 t p (s) -4 10 -3 10 -2 10 -1 10 -5 10 -3 10 -2 10 -1 10 0 case c a s e 10 1 am17941v1 i d 25 15 5 0 0 1 v ds (v) 2 (a) 3 2v 3v v gs =6, 7, 8, 9, 10v 10 20 30 4v 5v 35 40 am17931v1 i d 30 20 10 0 0 4 v gs (v) 7 (a) 2 6 5 15 25 35 v ds =2v 1 35 am17932v1 v gs 6 4 2 0 0 8 q g (nc) (v) 24 8 12 16 10 28 12 4 20 i d =9a am17933v1 r ds(on) 24.0 23.5 23.0 0 2 i d (a) (m ) 24.5 v gs =10v 4 6 8 am17942v1
docid023669 rev 3 7/15 STL30P3LLH6 electrical characteristics figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on-resistance vs temperature figure 11. normalized v ds vs temperature figure 12. source-drain diode forward characteristics c 600 400 200 0 0 10 v ds (v) (pf) 5 15 ciss coss crss 20 25 800 1000 1200 1400 1600 am17935v1 v gs(th) 1 0.8 0.6 0.4 -50 0 t j (c) (norm) -25 1.2 75 25 50 100 i d =250a -75 125 150 am17936v1 1.2 r ds(on) t j (c) (norm) -50 0 -25 75 25 50 100 -75 125 150 1 0.8 0.6 0.4 1.6 1.4 am17943v1 i d =4.5a v ds t j (c) (norm) 0.94 0.96 0.98 1 1.02 1.04 1.06 i d =1ma 1.08 -50 0 -25 75 25 50 100 -75 125 150 am17938v1 v sd 0 4 i sd (a) (v) 2 6 0.5 0.6 0.7 t j =-55c t j =175c t j =25c 0.8 0.9 1 8 am17944v1
test circuits STL30P3LLH6 8/15 docid023669 rev 3 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for diode recovery behavior am11255v1 am11256v1 am11257v1
docid023669 rev 3 9/15 STL30P3LLH6 package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL30P3LLH6 10/15 docid023669 rev 3 figure 16. powerflat? 5x6 type s-r drawing 5 8 4 1 pin 1 identification 1 4 5 8 pin 1 identification . side view top view bottom view 8231817_rev.h_type s-r
docid023669 rev 3 11/15 STL30P3LLH6 package mechanical data figure 17. recommended footprint table 8. powerflat 5x6 type s-r mechanical data dim. mm min. typ. max. a 0.80 1.00 a1 0.02 0.05 a2 0.25 b 0.30 0.50 d 5.00 5.20 5.40 e 5.95 6.15 6.35 d2 4.11 4.31 e2 3.50 3.70 e1.27 l 0.60 0.80 k 1.275 1.575 footprint
packaging mechanical data STL30P3LLH6 12/15 docid023669 rev 3 5 packaging mechanical data figure 18. powerflat? 5x6 tape (a) figure 19. powerflat? 5x6 package orientation in carrier tape a. all dimensions are in millimeters. measured from centerline of sprocket hole to centerline of pocket. cumulative tolerance of 10 sprocket holes is 0.20 . measured from centerline of sprocket hole to centerline of pocket. (i) (ii) (iii) 2 2.00.1 (i) bo (5.300.1) ko (1.200.1) 0.05) ?1.5 min. ?1.550.05 p ao(6.300.1) f(5.500.1)(iii) w(12.000.3) 1.750.1 4.00.1 (ii) p 0 y y section y-y c l p1(8.000.1) do d1 e 1 (0.30 t ref.r0.50 ref 0.20 base and bulk quantity 3000 pcs 8234350_tape_rev_c pin 1 identification
docid023669 rev 3 13/15 STL30P3LLH6 packaging mechanical data figure 20. powerflat? 5x6 reel 2.20 ?21.2 13.00 core detail 2.50 1.90 r0.60 77 128 ?a r1.10 2.50 4.00 r25.00 part no. w1 w2 18.4 (max) w3 06 ps esd logo at t e n t i o n observe precautions for handling electrostatic sensitive devices 11.9/15.4 12.4 (+2/-0) a 330 (+0/-4.0) all dimensions are in millimeters ?n 178(2.0) 8234350_reel_rev_c
revision history STL30P3LLH6 14/15 docid023669 rev 3 6 revision history table 9. document revision history date revision changes 20-mar-2013 1 first release. 28-nov-2013 2 ? modified: title ? modified: i d , p tot values and figure 1 in cover page ? modified: v gs , i d (at t pcb =125 c and t pcb =100 c), i dm , p tot (at t c =25 c and t pcb =25 c) and t stg in table 2 ? modified: r thj-pcb value in table 3 ? modified: i gss (v gs - test condition) value and i d (for r ds(on) ) in table 4 ? modified: q g value in table 5 ? modified: i d value in table 6 ? modified: i sd and i sdm in table 7 ? added: section 2.1: electrical characteristics (curves) ? minor text changes 08-jan-2014 3 ? modified: t j value in table 2 ? modified: figure 6 ? updated: section 4: package mechanical data ? minor text changes
docid023669 rev 3 15/15 STL30P3LLH6 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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